switchmode ? npn bipolar power transistor for switching power supply applications the bul44 have an applications specific stateoftheart die designed for use in 220 v line operated switchmode power supplies and electronic light ballasts. these high voltage/high speed transistors offer the following: ? improved efficiency due to low base drive requirements: high and flat dc current gain h fe fast switching no coil required in base circuit for turnoff (no current tail) ? full characterization at 125 c ? tight parametric distributions are consistent lottolot maximum ratings rating symbol value unit collectoremitter sustaining voltage v ceo 400 vdc collectoremitter breakdown voltage v ces 700 vdc emitterbase voltage v ebo 9.0 vdc collector current e continuous e peak(1) i c i cm 2.0 5.0 adc base current e continuous e peak(1) i b i bm 1.0 2.0 adc total device dissipation (t c = 25 c) derate above 25 c p d 50 0.4 watts w/ c operating and storage temperature t j , t stg 65 to 150 c thermal characteristics rating symbol max unit thermal resistance e junction to case e junction to ambient r q jc r q ja 2.5 62.5 c/w maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds t l 260 c on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 5 1 publication order number: bul44/d bul44 power transistor 2.0 amperes 700 volts 40 and 100 watts bul44 case 221a06 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
bul44 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter sustaining voltage (i c = 100 ma, l = 25 mh) v ceo(sus) 400 e e vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo e e 100 m adc collector cutoff current (v ce = rated v ces , v eb = 0) (t c = 125 c) collector cutoff current (v ce = 500 v, v eb = 0) (t c = 125 c) i ces e e e e e e 100 500 100 m adc emitter cutoff current (v eb = 9.0 vdc, i c = 0) i ebo e e 100 m adc on characteristics baseemitter saturation voltage (i c = 0.4 adc, i b = 40 madc) (i c = 1.0 adc, i b = 0.2 adc) v be(sat) e e 0.85 0.92 1.1 1.25 vdc collectoremitter saturation voltage (i c = 0.4 adc, i b = 40 madc) (t c = 125 c) (i c = 1.0 adc, i b = 0.2 adc) (t c = 125 c) v ce(sat) e e e e 0.20 0.20 0.25 0.25 0.5 0.5 0.6 0.6 vdc dc current gain (i c = 0.2 adc, v ce = 5.0 vdc) (t c = 125 c) (i c = 0.4 adc, v ce = 1.0 vdc) (t c = 125 c) (i c = 1.0 adc, v ce = 1.0 vdc) (t c = 125 c) (i c = 10 madc, v ce = 5.0 vdc) h fe 14 e 12 12 8.0 7.0 10 e 32 20 20 14 13 22 34 e e e e e e e dynamic characteristics current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) f t e 13 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob e 38 60 pf input capacitance (v eb = 8.0 v) c ib e 380 600 pf dynamic saturation volt (i c = 0.4 adc i b 40 madc 1.0 m s (t c = 125 c) e e 2.5 2.7 e e dynamic saturation volt- age: determined 1.0 m s and c i b1 = 40 madc v cc = 300 v) 3.0 m s (t c = 125 c) v e e 1.3 1.15 e e vdc determined 1 . 0 m s and 3.0 m s respectively after rising i b1 reaches 90% of final i (i c = 1.0 adc i b 0 2 adc 1.0 m s (t c = 125 c) v ce(dsat) e e 3.2 7.5 e e vdc b1 final i b1 c i b1 = 0.2 adc v cc = 300 v) 3.0 m s (t c = 125 c) e e 1.25 1.6 e e (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. (continued)
bul44 http://onsemi.com 3 switching characteristics: resistive load (d.c. 10%, pulse width = 20 m s) turnon time (i c = 0.4 adc, i b1 = 40 madc i b2 = 0.2 adc, v cc = 300 v) (t c = 125 c) t on e e 40 40 100 e ns turnoff time (i c = 0.4 adc, i b1 = 40 madc i b2 = 0.2 adc, v cc = 300 v) (t c = 125 c) t off e e 1.5 2.0 2.5 e m s turnon time (i c = 1.0 adc, i b1 = 0.2 adc i b1 = 0.5 adc, v cc = 300 v) (t c = 125 c) t on e e 85 85 150 e ns turnoff time (i c = 1.0 adc, i b1 = 0.2 adc i b2 = 0.5 adc, v cc = 300 v) (t c = 125 c) t off e e 1.75 2.10 2.5 e m s switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 m h) fall time (i c = 0.4 adc, i b1 = 40 madc i b2 = 0.2 adc) (t c = 125 c) t fi e e 125 120 200 e ns storage time (t c = 125 c) t si e e 0.7 0.8 1.25 e m s crossover time (t c = 125 c) t c e e 110 110 200 e ns fall time (i c = 1.0 adc, i b1 = 0.2 adc i b2 = 0.5 adc) (t c = 125 c) t fi e e 110 120 175 e ns storage time (t c = 125 c) t si e e 1.7 2.25 2.75 e m s crossover time (t c = 125 c) t c e e 180 210 300 e ns fall time (i c = 0.8 adc, i b1 = 160 madc i b2 = 160 madc) (t c = 125 c) t fi 70 e e 180 170 e ns storage time (t c = 125 c) t si 2.6 e e 4.2 3.8 e m s crossover time (t c = 125 c) t c e e 190 350 300 e ns
bul44 http://onsemi.com 4 2.0 i b , base current (ma) 0 1000 100 10 1.0 1.0 10 i c , collector current (amps) 0.01 10 1.0 0.1 0.01 1.0 0.1 typical static characteristics 100 i c , collector current (amps) 1.0 10 1.0 0.1 0.01 10 1.0 10 100 1.0 10 100 1000 c, capacitance (pf) v ce , collector-emitter voltage (volts) i c , collector current (amps) 10 1.0 0.1 0.01 1.2 0.4 0.9 0.7 0.5 0.6 0.8 1.1 1.0 h fe , dc current gain v ce = 1 v t j = 125 c t j = 25 c 100 i c , collector current (amps) 1.0 10 1.0 0.1 0.01 10 h fe , dc current gain v ce = 5 v t j = 125 c t j = 25 c t j = -20 c v ce , voltage (volts) t j = 25 c i c = 0.2 a 0.4 a 1 a 1.5 a 2 a i c /i b = 10 i c /i b = 5 v ce , voltage (volts) t j = 25 c t j = 125 c v be , voltage (volts) i c /i b = 5 i c /i b = 10 figure 1. dc current gain at 1 volt figure 2. dc current gain at 5 volts figure 3. collector saturation region figure 4. collectoremitter saturation voltage figure 5. baseemitter saturation region figure 6. capacitance c ib c ob t j = 25 c f = 1 mhz t j = 25 c t j = 125 c
bul44 http://onsemi.com 5 300 250 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t, time (ns) i c , collector current (amps) 6.0 5.0 4.0 3.0 2.0 0 1.0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) t, time (ns) 2500 2000 1500 1000 500 0 0.4 0.8 1.2 1.6 2.0 2.4 i c , collector current (amps) 250 200 150 100 50 0 i c , collector current (amps) 0.4 0.8 1.2 1.6 2.0 2.4 typical switching characteristics (i b2 = i c /2 for all switching) h fe , forced gain 2.0 1.5 1.0 0.5 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 200 150 100 50 i c , collector current (amps) 0.4 0.8 1.2 1.6 2.0 2.4 figure 7. resistive switching, t on figure 8. resistive switching, t off figure 9. inductive storage time, t si figure 10. inductive storage time figure 11. inductive switching, t c and t fi i c /i b = 5 figure 12. inductive switching, t c and t fi i c /i b = 10 t, time (s) m , storage time ( t si m s) t, time (ns) t, time (ns) i c /i b = 10 i c /i b = 5 i c /i b = 5 i c /i b = 10 i c /i b = 5 i c /i b = 10 i c = 0.4 a i c = 1 a t c t fi t c t fi i b(off) = i c/2 v cc = 300 v pw = 20 m s i b(off) = i c/2 v cc = 300 v pw = 20 m s i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 m h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 m h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 m h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c
bul44 http://onsemi.com 6 130 120 110 100 90 80 10 11 12 13 14 15 h fe , forced gain 9.0 8.0 7.0 6.0 5.0 140 150 160 170 110 90 70 50 10 11 12 13 14 15 h fe , forced gain 9.0 8.0 7.0 6.0 5.0 130 150 170 190 0.1 1.0 10 10 100 1000 v ce , collector-emitter voltage (volts) 0.01 typical switching characteristics (i b2 = i c /2 for all switching) 0 200 400 500 2.5 2.0 1.5 1.0 0.5 0 v ce , collector-emitter voltage (volts) 100 300 600 700 guaranteed safe operating area information figure 13. inductive fall time figure 14. inductive crossover time figure 15. forward bias safe operating area figure 16. reverse bias switching safe operating area t fi , fall time (ns) t c , crossover time (ns) i c , collector current (amps) i c , collector current (amps) i c = 0.4 a i c = 1 a i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 m h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 m h i c = 1 a i c = 0.4 a 10 m s 1 m s 50 m s 1ms 5ms extended soa dc (bul44) t c 125 c gain 4 l c = 500 m h -1.5 v -5 v 0 v t j = 25 c t j = 125 c t j = 25 c t j = 125 c 20 40 60 80 100 1.0 0.8 0.6 0.4 0.2 0 t c , case temperature ( c) power derating factor 120 140 1 6 figure 17. forward bias power derating second break- down derating thermal derating there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j(pk) may be calculated from the data in figure 20. at any case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turnoff with the basetoemitter junction reversebiased. the safe level is specified as a reversebiased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
bul44 http://onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 time v ce volts i b 1 m s 3 m s 90% i b dyn 1 m s dyn 3 m s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi +15 v 1 m f 150 w 3 w 100 w 3 w mpf930 +10 v 50 w common -v off 500 m f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 w 3 w 100 m f i out a 1 m f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 mh rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 r b2 r b1 figure 18. dynamic saturation voltage measurements figure 19. inductive switching measurements table 1. inductive load switching drive circuit t, time (ms) 1000 100 10 1.0 0.1 0.01 0.01 0.01 0.01 0.5 0.2 0.1 0.05 0.02 1.0 r(t) transient thermal resistance (normalized) single pulse typical thermal response r q jc(t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc1 (t) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk) figure 20. typical thermal response (z q jc (t)) for bul44
bul44 http://onsemi.com 8 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bul44/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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